The T-ESC® Technology by ProTec® offers safe and easy handling as well as processing of fragile, thin and ultra-thin substrates (thinner 50 µm), e.g. GaAs, InP, LN, LT, thin silicon, thin MEMS wafer and many more. The basic concept behind this adhesive free temporary bonding technology involves using electrostatic force to chuck thin and ultra-thin wafers onto mobile rigid Carriers (T-ESC®). Such wafer-Carrier packages can be handled and processed like wafers of standard thickness.

Therefore, existing standard cassettes, handling tools, and fabrication equipment can be used without modifications. Additional effect: the warping and bowing of thin and ultra-thin substrates are eliminated, which is highly welcome. All our Carriers are available in standard sizes from 2" to 12" and additionally in customized shapes suited to the intended application.



The Plasma-Resistant High-Temperature Transfer ElectroStatic Carrier (Litho HT T-ESC®) is our specifically designed solution for thin wafer handling support during plasma and ion implantation processing. It is based on our HT T-ESC®, due to a special design interaction between T-ESC® and plasma/ion bombardment is avoided. Therefore the wafer is always securely chucked on top of the PR HT T-ESC, in addition the HT T-ESC family is compatible with existing stationary electrostatic chuck solutions inside the process chambers and has a very high heat transfer rate, so that the cooling during processing is still present for the device wafer.

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Typical Applications

  • Solution for thin wafer handling support during plasma and implantation processes

  • Compatibility with existing handling systems (transport cassettes, vacuum, Bernoulli or mechanical end effectors, etc.)

  • Ultra Low contamination

  • High flatness

  • Outgassing free

  • Re-usable

  • Sizes from 2" to 12", customized shapes and features possible

Recommended Processes


Plasma-Resistant PR HT T-ESC Technology

Electro Plating

Electro Plating is a method to form layers out of a liquid phase onto a substrate. The desired regions are masked and the substrate is dipped into the bath, usually the backside is covered and by applying an electrical field between the substrate and the liquid a layer forms on the not covered surface of the substrate.


During Wafer processing the wafer needs to be transferred back and forth from cassettes to tools and also inside the tools from on station to the other. For fragile substrates this is already challenging, because they tend do brake or get cracks, which can lead to future breakage. Also bowing of thinned substrates brings a lot of trouble for all tooling because they are usually not designed for this very special operation. Temporary bonding with our T-ESC® is a great help here as the processing tools only see a standard wafer and trouble with handling, therefore wafer breakage is eliminated.

Ion Implantation

The substrate is bombarded with ions which will stop inside the crystal structure and form doped regions. Usually this is only wanted in specific parts of the wafer, so the rest is covered by a mask and the depth of the ions can be controlled as well.

CVD: Chemical Vapor Deposition uses gases to deposit layers on the substrate. Depending on the specific type of CVD different temperatures and materials are used, leading to layers which vary in density and stability according to CVD type. The higher the temperature, the better the layer properties and usually the longer the processing time, but not all substrate materials or already built structures can withstand the high temperatures. So cooling is needed for the substrate or choosing a low temperature CVD process type.

PECVD: Plasma Enhanced Chemical Vapor Deposition usually uses temperatures which are lower than in a pure CVD step, a plasma leads to a split of the reactive gases, which are then deposited on the substrate.


Basically processes starting with a solid or liquid phase forced into the gas phase and building a solid again are called Physical Vapor Deposition. Sputtering is the most famous of these. Ions are accelerated and hit a target material, the ion bombardment results in free particles from the target material, these particles form a conformal layer on the substrate. There are different methods for the Sputtering process depending on the target material and the desired layer properties, e.g. by adding reactive gases into the chamber a combination of target material and gases build the layer on the substrate. Another option is to heat a material until it gets into the gas phase and then guide it to the target substrate, this is called evaporation.

Plasma Clean / Ashing

Plasma Clean or Ashing is usually used to clean the substrate surface from residues of resist or other contamination. The gas is ionized and reacts with the resist forming ash which is pumped out the chamber by vacuum pumps.


Reactive Ion Etching is a process where ions are accelerated onto the substrate, hitting the surface and creating free particles. Depending on the chosen gases the ions are more reactive to different materials generating a selective process. However, the bombardment is creating damages, which can lead to a healing process afterwards.
The Deep Reactive Ion Etching is usually a mixture of etching and passivation layers to generate deep and sharp holes or pillars. The etching and passivation is done in a sequence.

Our Machines

Maschine Protec ACU 3000

ACU 3000

A fully automated electrostatic chucking/de-chucking unit with up to 120 wafers and/or T-ESC® packages per hour, guarantying an highest yield during handling and many diagnostics features.

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MCU 3000 freigestellt

MCU 3000

A manual chucking / de-chucking unit of thin and ultra-thin substrates on carriers T-ESC® for flexible sizes from 4”/6” to 8”/12” with a high flexible mobile handling tool and diagnostic features.

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